View STI24N60M2_7574463.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. may 2013 docid023964 rev 4 1/22 22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 n-channel 600 v, 0.168 typ., 18 a mdmesh ii plus? low q g power mosfet in d 2 pak, i 2 pak, to-220 and to-247 packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. d(2, tab) g(1) s(3) am01476v1 d 2 pak to-220 to-247 i 2 pak 1 3 2 tab 1 2 3 tab 1 2 3 1 2 3 tab order codes v ds @ t jmax r ds(on) max i d stb24n60m2 650 v 0.19 18 a STI24N60M2 stp24n60m2 stw24n60m2 table 1. device summary order codes marking package packaging stb24n60m2 24n60m2 d 2 pak tape and reel STI24N60M2 i 2 pak tube stp24n60m2 to-220 stw24n60m2 to-247 www.st.com
contents stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 2/22 docid023964 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid023964 rev 4 3/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 18 a i d drain current (continuous) at t c = 100 c 12 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 72 a p tot total dissipation at t c = 25 c 150 w dv/dt (2) 2. i sd 18 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit d 2 pak i 2 pak to-220 to-247 r thj-case thermal resistance junction-case max 0.83 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 30 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 3.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 180 mj
electrical characteristics stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 4/22 docid023964 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9 a 0.168 0.19 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1060 - pf c oss output capacitance - 55 - pf c rss reverse transfer capacitance -2.2- pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 258 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 7 - q g total gate charge v dd = 480 v, i d = 18 a, v gs = 10 v (see figure 17 ) -29-nc q gs gate-source charge - 6 - nc q gd gate-drain charge - 12 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 9 a, r g = 4.7 , v gs = 10 v (see figure 16 and 21 ) -14-ns t r rise time - 9 - ns t d(off) turn-off delay time - 60 - ns t f(i) fall time - 15 - ns
docid023964 rev 4 5/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 18 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 72 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s v dd = 60 v (see figure 18 ) - 332 ns q rr reverse recovery charge - 4 nc i rrm reverse recovery current - 24 a t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 18 ) - 450 ns q rr reverse recovery charge - 5.5 nc i rrm reverse recovery current - 25 a
electrical characteristics stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 6/22 docid023964 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak, i 2 pak and to-220 figure 3. thermal impedance d 2 pak, i 2 pak and to-220 am15495v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15461v1 i d 30 20 10 0 0 10 v ds (v) (a) 5 15 40 v gs = 4 v v gs = 5 v v gs = 7 v v gs = 8, 9, 10 v 5 15 25 35 v gs = 6 v 20 am15470v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 10 20 v ds = 17 v 25 30 35 40 am15469v1
docid023964 rev 4 7/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =480 v i d =18 a 25 300 200 100 0 400 500 v ds (v) v ds 12 30 600 am15471v1 r ds(on) 0.172 0.168 0.164 0.160 0 8 i d (a) ( ) 4 12 0.176 v gs =10v 16 am15465v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am15467v1 e oss 2 1 0 0 100 v ds (v) (j) 400 3 200 300 4 5 500 600 6 7 8 am15472v1 v gs(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) (norm) -25 1.0 75 25 50 100 i d = 250 a 1.1 am15473v1 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d = 9 a 2.3 v gs = 10 v am15464v1
electrical characteristics stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 8/22 docid023964 rev 4 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature v sd 0 4 i sd (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0.8 1 1.2 t j =-50c t j =150c t j =25c 12 14 16 1.4 am15468v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.05 1.07 1.03 i d = 1ma 1.09 1.11 am15466v1
docid023964 rev 4 9/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 test circuits 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 m f 3.3 m f v dd am01469v1 v dd 47k w 1k w 47k w 2.7k w 1k w 12v v i =20v=v gmax 2200 m f p w i g =const 100 w 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 w a a b b r g g fast diode d s l=100 m h m f 3.3 1000 m f v dd am01471v1 v i p w v d i d d.u.t. l 2200 m f 3.3 m f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 10/22 docid023964 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023964 rev 4 11/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 package mechanical data table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 12/22 docid023964 rev 4 figure 22. d2pak (to-263) drawing figure 23. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid023964 rev 4 13/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 package mechanical data table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
package mechanical data stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 14/22 docid023964 rev 4 figure 24. i2pak (to-262) drawing 0004982_rev_h
docid023964 rev 4 15/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 package mechanical data table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 16/22 docid023964 rev 4 figure 25. to-220 type a drawing bw\sh$b5hyb7
docid023964 rev 4 17/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 package mechanical data table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 18/22 docid023964 rev 4 figure 26. to-247 drawing 0075325_g
docid023964 rev 4 19/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 packaging mechanical data 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 20/22 docid023964 rev 4 figure 27. tape figure 28. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid023964 rev 4 21/22 stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 revision history 6 revision history table 14. document revision history date revision changes 10-dec-2012 1 first release. 20-dec-2012 2 added mosfet dv/dt ruggedness in table 2: absolute maximum ratings . 14-jan-2013 3 modified: figure 16 , 17 , 18 and 17 28-may-2013 4 ? minor text changes ? updated: table 7 ? updated: table 11 and figure 25
stb24n60m2, STI24N60M2, stp24n60m2, stw24n60m2 22/22 docid023964 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STI24N60M2

	To Download STI24N60M2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .